About this scholarly article

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - The Thermal Response of Gallium Nitride HFET Devices Grown on Silicon and SiC Substrates by Donmezer, Fatma N.; James, William; Graham, Samuel is a scholarly article available to read on EtoBox.

Author

Donmezer, Fatma N.; James, William; Graham, Samuel

Publisher

ECS

Published

2011

Language

EN