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Dielectric properties of AlNx thin films prepared by RF magnetron sputtering of Al using a N2/Ar sputtering gas mixture by R.D. Gould; S.A. Awan is a Engineering article available to read on EtoBox.

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Aluminium nitride is a low conductivity material which has applications as a dielectric and passivation layer in microelectronics. Normally, this material is prepared using chemical vapour deposition or molecular beam epitaxy, but following earlier work in which it has been demonstrated that silicon nitride may be successfully prepared by RF magnetron sputtering, we have investigated the electrical properties of aluminium nitride prepared by this technique. Al-AlN x -Al sandwich structure films were prepared by using a pure Al target with a sputtering gas mixture of N 2 /Ar in the ratio 3:7 (partial pressures 0.40 Pa nitrogen and 0.93 Pa argon) using an RF discharge power of 180 W. Initial measurements indicated that the relative permittivity was approximately 9.1 and that the capacitance was independent of applied DC voltage, demonstrating that the contacts did not form Schottky barriers. The AC conductivity j was observed to follow an expression r=Ax s , where A is a constant, x is the angular frequency and s is an index. Values of s were found to be in the range 0.62-1.31, increasing with increasing frequency in the range 100 Hz-20 kHz and decreasing with increasing temperature

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Author

R.D. Gould; S.A. Awan

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2004

Language

EN

Field

Engineering (Physical Sciences)