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About this Engineering article
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy by K Volz; S Schreiber; J.W Gerlach; W Reiber; B Rauschenbach; B Stritzker; W Assmann; W Ensinger is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- K Volz; S Schreiber; J.W Gerlach; W Reiber; B Rauschenbach; B Stritzker; W Assmann; W Ensinger
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-5093)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)