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Novel Boron-Doped p-Type Cu~2~O Thin Films as a Hole-Selective Contact in c-Si Solar Cells by K. MARKOSE, KURIAS; SHAJI, MANU; BHATIA, SWASTI; NAIR, PRADEEP R; Saji, Kachirayil J; Antony, Aldrin; Jayaraj, Madambi K. is a Engineering article available to read on EtoBox.

What is Novel Boron-Doped p-Type Cu~2~O Thin Films as a Hole-Selective Contact in c-Si Solar Cells about?

P-type Cu 2 O thin film doped with trivalent cation Boron is demonstrated for the first time as an efficient hole selective layer for c-Si heterojunction solar cell. Cu 2 O and Cu 2 O:B films were deposited by rf-magnetron sputtering and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the Cu 2 O film. The band alignment of the Cu 2 O:B/Si heterojunction was investigated using XPS and UPS measurements. The

Who reads Novel Boron-Doped p-Type Cu~2~O Thin Films as a Hole-Selective Contact in c-Si Solar Cells?

It is typically read by researchers, students, and practitioners in Engineering.

Author
K. MARKOSE, KURIAS; SHAJI, MANU; BHATIA, SWASTI; NAIR, PRADEEP R; Saji, Kachirayil J; Antony, Aldrin; Jayaraj, Madambi K.
Publisher
American Chemical Society; American Chemical Society (ACS) (ISSN 1944-8244)
Published
2020
Language
EN
Field
Engineering (Physical Sciences)

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