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Can I read Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE on EtoBox?
Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE by Makoto Kasu; Naoki Kobayashi is a Engineering article available to read on EtoBox.
What is Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE about?
Electron "eld emission (FE) from high-quality AlN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5;10 cm\) high-quality AlN were as low as 91 and 94 arcsec, respectively. The heavily Si-doped AlN showed a maximum FE current of 347 A and its density was 11 mA/cm. Field emission enhancement as a result of Si doping can be explained by hopping conduction through a Si impurity level. White, red, green, blue light emission (luminance: about 1200 cd/m) from phosphors excited by the "eld-emitted electrons was observed.
Who reads Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Makoto Kasu; Naoki Kobayashi
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)