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Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD by A Olszyna; J Siwiec; R Dwiliński; M Kamińska; J Konwerska-Hrabowska; A Sokołowska is a Materials Science article available to read on EtoBox.
What is Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD about?
In this work, results of photoluminescence and absorption measurements on pulse plasma assisted CVD layers of AlN are presented. We studied nanocrystalline layers grown on silicon substrate at a temperature of 300 K. The efficient photoluminescence of nanocrystalline AlN layers, obtained under non optimal conditions, i.e. relatively low excitation energy, seems to be promising for light emitting applications of this material.
Who reads Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- A Olszyna; J Siwiec; R Dwiliński; M Kamińska; J Konwerska-Hrabowska; A Sokołowska
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 1997
- Language
- EN
- Field
- Materials Science (Physical Sciences)