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Integrated Tungsten Polycide: Analysis of Interface Composition by John Y Adachi; Bob C McIntosh; Dave E Badt is a Engineering article available to read on EtoBox.

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## Ž . The process simplification value of integrated polycide in-situ doped silicon film integrated with tungsten silicide is reviewed. The characterization of tungsten and silicon composition in the interface region and its dependence on phosphorus content in the silicon is developed. High concentrations of phosphorus are shown to be a controlling factor driving the composition to be tungsten rich; variations in silane or disilane chemistry and silicon deposition temperature spanning from amorphous as-deposited to polycrystalline are minor factors. With the objective of increasing the interfacial Si:W ratio to improve film quality, we report the extension of Si rich films into the mid E20 atomsrc.c. phosphorus doping range.

Who reads Integrated Tungsten Polycide: Analysis of Interface Composition?

Author

John Y Adachi; Bob C McIntosh; Dave E Badt

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)