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About this Engineering article
Nanometer-scale pattern formation of GaAs by in situ electron-beam lithography using surface oxide layer as a resist film by T. Ishikawa is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- T. Ishikawa
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 1995
- Field
- Engineering (Physical Sciences)