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About this Materials Science article

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High‐k Gate Dielectric Materials by Lin, Yu Hsien (author);Chou, Jay Chi (author) is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Lin, Yu Hsien (author);Chou, Jay Chi (author)
Publisher
Hindawi Publishing Corporation
Published
2015
Field
Materials Science (Physical Sciences)

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