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Si Doping in Amorphous GaOx Films Via Plasma-Enhanced ALD For Dielectric and Optoelectronic Applications by Montaser Kassem is a document available to read on EtoBox.
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The article discusses the fabrication and characterization of silicon-doped amorphous gallium oxide (Si-GaOx) thin films using plasma-enhanced atomic layer deposition (PEALD) for dielectric and optoelectronic applications. The study highlights the advantages of PEALD in achieving controlled stoichiometries and doping concentrations, which optimize the films
- Author
- Montaser Kassem
- Language
- EN