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Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper) by Paul C. McIntyre; Yasuhiro Oshima; Eunji Kim; Krishna C. Saraswat is a Engineering article available to read on EtoBox.

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Atomic layer deposited (ALD) HfO 2 /GeO x N y /Ge(1 0 0) and Al 2 O 3 /In 0.53 Ga 0.47 As(1 0 0) À 4 Â 2 gate stacks were analyzed both by MOS capacitor electrical characterization and by advanced physical characterization to correlate the presence of electrically-active defects with chemical bonding across the insulator/ channel interface. By controlled in situ plasma nitridation of Ge and post-ALD annealing, the capacitance-derived equivalent oxide thickness was reduced to 1.3 nm for 5 nm HfO 2 layers, and mid-gap density of interface states, D it = 3 Â 10 11 cm À2 eV À1 , was obtained. In contrast to the Ge case, where an engineered interface layer greatly improves electrical characteristics, we show that ALD-Al 2 O 3 deposited on the In 0.53 Ga 0.47 As (1 0 0) À 4 Â 2 surface after in situ thermal desorption in the ALD chamber of a protective As cap results in an atomically-abrupt and unpinned interface. By avoiding subcutaneous oxidation of the InGaAs channel during Al 2 O 3 deposition, a relatively passive gate oxide/III-V interface is formed.

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Author

Paul C. McIntyre; Yasuhiro Oshima; Eunji Kim; Krishna C. Saraswat

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)