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About this Physics and Astronomy article
Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers by Gotow, Takahiro; Mitsuhara, Manabu; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Gotow, Takahiro; Mitsuhara, Manabu; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2019
- Field
- Physics and Astronomy (Physical Sciences)