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About this Engineering article
Electronic and Structural Properties of Doped Amorphous and Nanocrystalline Silicon Deposited at Low Substrate Temperatures by Radio-frequency Plasma-enhanced Chemical Vapor Deposition by Alpuim, P.; Chu, V.; Conde, J. P. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Alpuim, P.; Chu, V.; Conde, J. P.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)