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About this Engineering article
Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si by Arulkumaran, Subramaniam; Vicknesh, Sahmuganathan; Ing, Ng Geok; Selvaraj, Susai Lawrence; Egawa, Takashi is a Engineering article available to read on EtoBox.
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- Author
- Arulkumaran, Subramaniam; Vicknesh, Sahmuganathan; Ing, Ng Geok; Selvaraj, Susai Lawrence; Egawa, Takashi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2011
- Field
- Engineering (Physical Sciences)