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This study presents the development of an ultra-high responsivity ZnO/Si heterojunction photodetector (PD) capable of operating across a wide spectral range, enhancing its performance through a UV-enhanced Si-photodiode. The research highlights the effective modulation of photo-generated electron-hole pairs and the optimization of various system parameters, such as thickness and bias voltage, to improve the PD

Author

Subhojoy Pal

Language

EN