Can I read High p doped and robust band structure in Mg-doped hexagonal boron nitride on EtoBox?

High p doped and robust band structure in Mg-doped hexagonal boron nitride by Khalil, Lama (author);Ernandes, Cyrine (author);Avila, José (author);Rousseau, Adrien (author);Dudin, Pavel (author);Zhigadlo, Nikolai D. (author);Cassabois, Guillaume (author);Gil, Bernard (author);Oehler, Fabrice (author);Chaste, Julien (author);Ouerghi, Abdelkarim (author) is a Materials Science article available to read on EtoBox.

What is High p doped and robust band structure in Mg-doped hexagonal boron nitride about?

In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties. Here, we report on the stable growth of p-type hexagonal boron nitride (h-BN) using Mg-atoms as substitutional impurities in the h-BN honeycomb lattice. We use micro-Raman spectroscopy, angle-resolved photoemission measurements (nano-ARPES) and Kelvin probe force microscopy (KPFM) to study the electronic properties of Mg-doped h-BN grown by solidification from a ternary Mg–B–N system. Besides the observation of a new Raman line at ∼1347 cm^−1^ in Mg-doped h-BN, nano-ARPES reveals p-type carrier concentration. Our nano-ARPES experiments demonstrate that the Mg dopants can significantly alter the electronic properties of h-BN by shifting the valence band maximum about 150 meV toward higher binding energies with respect to pristine h-BN. We further show that, Mg doped h-BN exhibits a robust, almost unaltered, band structure compared to pristine h-BN, with no significant deformation. Kelvin probe force microscopy (KPFM) confirms the p-type doping, with a reduced Fermi level difference between pristine and Mg-doped h-BN crystals. Our findings demonstrate that conventional se

Who reads High p doped and robust band structure in Mg-doped hexagonal boron nitride?

Author

Khalil, Lama (author);Ernandes, Cyrine (author);Avila, José (author);Rousseau, Adrien (author);Dudin, Pavel (author);Zhigadlo, Nikolai D. (author);Cassabois, Guillaume (author);Gil, Bernard (author);Oehler, Fabrice (author);Chaste, Julien (author);Ouerghi, Abdelkarim (author)

Publisher

Royal Society of Chemistry (RSC)

Published

2023

Language

EN

Field

Materials Science (Physical Sciences)