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Modeling of Surface-state Induced Inter-electrode Isolation of $N$-on-$p$ Devices in Mixed-field and $\Gamma$-irradiation Environments by Akchurin, N.; Peltola, T. is a scholarly article available to read on EtoBox.

What is Modeling of Surface-state Induced Inter-electrode Isolation of $N$-on-$p$ Devices in Mixed-field and $\Gamma$-irradiation Environments about?

In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to counter the detrimental effect on position resolution of the accumulation of positive net oxide charge with radiation. In addition to the positively charged layer close to the Si/SiO$_2$-interface, surface damage introduced by radiation in SiO$_2$-passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/$\gamma$ (mixed field)- or $\gamma$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps ($N_\textrm{it,acc/don}$) in mixed-field environment. In this work, an inter-electrode resistivity ($\rho_\textrm{int}$) TCAD-simulation study of $n$-on-$p$ sensors with and without $p$-stop isolation implants was conducted for both irradiation types. Higher levels of $\rho_\textrm{int}$ showed correlation to higher densities of deep $N_\textrm{it,acc/don}$, with the isolat

Author

Akchurin, N.; Peltola, T.

Published

2024

Language

EN