About this Engineering article
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGexfor MOS applications by L. K. Bera; S. K. Ray; D. K. Nayak; N. Usami; Y. Shiraki; C. K. Maiti is a Engineering article available to read on EtoBox.
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- Author
- L. K. Bera; S. K. Ray; D. K. Nayak; N. Usami; Y. Shiraki; C. K. Maiti
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)