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Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy by K. Kusakabe; T. Furuzuki; K. Ohkawa is a Engineering article available to read on EtoBox.
What is Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy about?
## Abstract We report the cathodoluminescence (CL) characterization of nonpolar [11$ \bar 2 $0]‐oriented InGaN/GaN thin films grown on __r__‐plane sapphire substrates by atmospheric metalorganic vapor‐phase epitaxy. The epitaxial GaN films grown on __r__‐plane sapphire substrates frequently show facet surface morphology. The CL peak wavelength and local indium composition of InGaN grown on them were gradually varied with the probed position from the facet summit to valley. In __a__‐plane InGaN, the facet summit was In‐rich area while the valley was In‐poor area. This is due to the material transport issue during epitaxial growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Who reads Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy?
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- Author
- K. Kusakabe; T. Furuzuki; K. Ohkawa
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)