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About this Physics and Astronomy article
Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation by Zhang, Meng-Ying; Hu, Zhi-Yuan; Bi, Da-Wei; Dai, Li-Hua; Zhang, Zheng-Xuan is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Zhang, Meng-Ying; Hu, Zhi-Yuan; Bi, Da-Wei; Dai, Li-Hua; Zhang, Zheng-Xuan
- Publisher
- IOP Publishing; Institute of Physics Publishing (ISSN 1674-1056)
- Published
- 2018
- Field
- Physics and Astronomy (Physical Sciences)
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