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Can I read Effect of Ag doping on the photoluminescence properties of ZnO films on EtoBox?
Effect of Ag doping on the photoluminescence properties of ZnO films by Kaipeng Liu; Beifang Yang; Hongwei Yan; Zhengping Fu; Meiwang Wen; Youjun Chen; Jian Zuo is a Materials Science article available to read on EtoBox.
What is Effect of Ag doping on the photoluminescence properties of ZnO films about?
ZnO:Ag films were grown on Si (1 0 0) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT-PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550 1C, the intensity of the near-band edge (NBE) emission at 378 nm decreased and a new emission peak at 399 nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399 nm emission should be attributed to the electron transition from the conduction band to Ag Znrelated complexes defects radiative centers above the valence band.
Who reads Effect of Ag doping on the photoluminescence properties of ZnO films?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kaipeng Liu; Beifang Yang; Hongwei Yan; Zhengping Fu; Meiwang Wen; Youjun Chen; Jian Zuo
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-2313)
- Published
- 2009
- Language
- EN
- Field
- Materials Science (Physical Sciences)