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About this Engineering article
Improved RF Power Performance in a 0.18-$\mu\hbox{m}$ MOSFET Which Uses an Asymmetric Drain Design by Chang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2008
- Field
- Engineering (Physical Sciences)
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