Opening book details…
About this Engineering article
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD by Nishino, Shigehiro; Masuda, Yasuichi; Ohshima, Satoru; Jacob, Chacko is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Nishino, Shigehiro; Masuda, Yasuichi; Ohshima, Satoru; Jacob, Chacko
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2001
- Field
- Engineering (Physical Sciences)
More by Nishino, Shigehiro; Masuda, Yasuichi; Ohshima, Satoru; Jacob, Chacko
Browse all works by Nishino, Shigehiro; Masuda, Yasuichi; Ohshima, Satoru; Jacob, Chacko