About this scholarly article

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Sub-10nm junction in InGaAs with sulfur mono-layer doping by Loh, W.-Y; Wang, W.-E; Hill, R. J. W.; Barnett, J.; Yum, J. H.; Lysagth, P.; Price, J.; Hung, P. Y.; Kirsch, P. D.; Jammy, R. is a scholarly article available to read on EtoBox.

Author

Loh, W.-Y; Wang, W.-E; Hill, R. J. W.; Barnett, J.; Yum, J. H.; Lysagth, P.; Price, J.; Hung, P. Y.; Kirsch, P. D.; Jammy, R.

Publisher

IEEE

Published

2013