Can I read Ion Implantation for Spin Defects in h-BN on EtoBox?

Ion Implantation for Spin Defects in h-BN by Ikshvaku Shyam is a document available to read on EtoBox.

What is Ion Implantation for Spin Defects in h-BN about?

This document discusses the generation of spin defects in hexagonal boron nitride through ion implantation, detailing the effects of implantation parameters on spin properties, stability at room temperature, and high-contrast ODMR spectra. It outlines the probability of generating V−B centers per ion and explores the relationship between T1 time and ion species. The findings suggest that while larger ion radii increase damage, they do not necessarily correlate with an increase in V−B defect density.

Author

Ikshvaku Shyam

Language

EN