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About this Materials Science article
Evidences for the Existence of a High-Carrier-Density Layer near Undoped-GaN/α-Al2O3 Substrate Interface by A. Yamamoto; K. Azuma; K. Ueno; Y. Tsuji; A. Hashimoto is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- A. Yamamoto; K. Azuma; K. Ueno; Y. Tsuji; A. Hashimoto
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 1999
- Language
- EN
- Field
- Materials Science (Physical Sciences)
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