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About this Engineering article
Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology by Grella, K. ;Dreiner, S. ;Vogt, H. ;Paschen, U. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Grella, K. ;Dreiner, S. ;Vogt, H. ;Paschen, U.
- Publisher
- International Microelectronics and Packaging Society; International Microelectronics and Packaging Society (IMAPS); IMAPS - International Microelectronics Assembly and Packaging Society (ISSN 1551-4897)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)
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